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Prof. Tarek Mohammad Abdolkader Hasan :: Publications: |
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| Title: | “A Computationally efficient method for quantum transport simulation of double-gate MOSFETs,” 2009 National Radio Science Conference, NRSC 2009, March 17- 19. |
| Authors: | Y.M. Sabry, M. T. Abdel-Hafez, T.M. Abdolkader, and W.F. Farouk |
| Year: | 2009 |
| Keywords: | Quantum chemistry Differential equations Galerkin methods Green's function MOSFET devices Quantum electronics |
| Journal: | Not Available |
| Volume: | Not Available |
| Issue: | Not Available |
| Pages: | Not Available |
| Publisher: | Not Available |
| Local/International: | Local |
| Paper Link: | Not Available |
| Full paper | Tarek Mohammad Abdolkader Hasan_Sabry_A Computationally...quantum transport simulation.pdf |
| Supplementary materials | Not Available |
| Abstract: |
Quantum effects play an important role in determining the Double-Gate (DG) MOSFETs characteristics. The Non-Equilibrium Green's Function (NEGF) formalism provides a rigorous description of quantum transport in nanoscale devices. The traditional NEGF is heavy in computations and not suitable for 3D or even 2D device simulation. In this article, we propose a method that reduces the simulation time dramatically without loss of accuracy. The proposed method is used to simulate a 5 nm channel length DG MOSFET. The simulation time is reduced from 72 minutes to 11 minutes per bias point on a home PC: Intel® Pentium 4 CPU 2.4GHz, 768 MB RAM. |
