Mohamed Tarek Hasan Mohamed Elewa|Publications

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Dr. Mohamed Tarek Hasan Mohamed Elewa :: Publications:

Research Fields

SIMOX

silicon

des

transistors

insulator

frequency noise

technique

Number of publications is 49

Title

1-“A Labview based experimental platform for ultrasonic range measurements” The international journal on digital signal processing, vol06, Issue II, pp 1-8.

2-“Virtual instrumentation based 12 leads ECG recording system” Ain Shams University, Faculty of Engineering, Vol.42, No4 , December , pp 497- 507.

3-“visual inspection for fired ceramic tile`s surface defects using wavelet analysis” Internatioal journal on graphics vision and image processing, Jan , ICGST-SN: P1150430001.

4-An accurate technique for ultrasonic range measurement in a noisy environment” Second international conference on intelligent computing and information systems, march, Cairo, Egypt.

5-Test of analog circuit using quasi-impulse response and step response” Ain Shams university, faculty of engineering, scientific bulletin, electrical engineering, vol 40, no. 1, March , pp 473-486.

6-“Automatic testing for linear analog circuits using pattern generation technique” Helwan university, Faculty of engineering, Mattaria-Cairo, Engineering research Journal, April , vol 98, pp E1-E11.

7-“Surface defects detection for ceramic tiles using image processing and morphological operation techniques” Proceedings of the first international computer engineering conference, Cairo, Egypt, Dec , pp 282-286.

8-“Quality control enhancement via non destructive testing for green ceramic tiles” The 46th IEEE international midwest symposium on circuits and systems, Cairo, Dec.

9-“Model for lifetime extraction from pseudo-MOSFET transients” Electronic Letters, vol.32, No. 21, pp 2021-2023.

10-“Novel technique for carrier lifetime measurement by ّ-MOSFET transients” Proceedings 1996 IEEE international SOI conference, Sanibel Island, FL, USA, Oct. , PP 160-161.

11-“Separation of the different components of the drain current in narrow channel MOS SIMOX transistors” Ain Shams University Engineering Bulletin, vol 29, pp. 83-94, Sep.

12-“Simulation of narrow channel effects in SIMOX MOS transistors” Ain Shams University Engineering Bulletin, vol 29, pp. 165-180, March.

13-“Degradation of the electronic properties of Gamma—irradiated SIMOX transistors” Proceedings of the first International Conference on Microelectronics, circuits and systems ,Cairo, Egypt, pp. 871—875, Dec 19—22.

14-“Measurement and modeling of drain current DLTS in Enhancement SOI MOSFETS” Microelectronics Journal, vol 24, pp.647—657

15-“Damage introduced in silicon on insulator materials during fabrication by oxygen ion implantation technique” Al—Azhar Engineering 3rd International Conference, Cairo, Egypt, vol 6, pp. 37—48, Dec. 18—21.

16-“Detailed analysis of edge effects in SIMOX-MOS transistors” IEEE Trans. Electron Devices, vol. ED-39, pp. 874—882, April

17-“A new transient drain current technique for interface characterization in SOI MOSFET’s” Proceedings of the 5th International Symposium On Silicon On Insulator Technology and Devices, USA, vol.92—13, pp. 195—202.

18-“Low frequency noise in depletion mode SIMOX transistors” IEEE Trans. Electron Devices, vol. ED-38, pp. 323—327.

19-“Adaptation of the charge pumping Technique to gated P-I-N diodes fabricated on Silicon on insulator” EEE Trans. Electron Devices, vol. ED-38, pp. 1432—1444.

20-“A new approach to current DLTS in enhancement—mode MOSFET’s: Application to SIMOX devices” roceedings of the IEEE International S0I Conference, Colorado, USA, pp. 98—99.

21-“Reliability aspects. of tunnel oxides under different Fowler—Nordheim stress conditions” Proceeding. of the 1991 International Conference on Microelectronics, Cairo, Egypt, PP. 304—307, Dec. 21—23.

22-“Noise associated with floating body effects in Silicon-On—Insulator MOS transistors” Proceeding. of the 1991 International Conference on Microelectronics, Cairo, Egypt, PP. 345—348, Dec. 21—23.

23-“Performance and physical mechanisms in SIMOX transistors operated at very low temperature IEEE Trans. Electron Devices, vol. ED-37, pp. 1007—1019.

24-“Interface coupling effects in thin silicon on insulator MOSFET’s” 5th Conference on the physics of electro-optic microstructures and microdevices,Heraklion, Greece.

25-“Noise sources in silicon on insulator (SIMOX) structures” 5th Conference on the physics of electro-optic microstructures and microdevices, Heraklion, Greece.

26-“Non—homogenity effects and noise sources in SOI MOSFET’s” First Conference in NOISE in advanced microelectronic devices”, Grenoble, France.

27-“Low frequency noise spectroscopy in thin SIMOX MOS transistors” IEEE SOS/SOI Technology Workshop, USA.

28-“Analyse at optimisation des matériaux et des composants issue des filières SOI” Opération GCIS COUCHES MINCES 1989-1990.

29-“Novel electrical characterisation of edge effects in SIMOX transistors” ESSDERC 89, Berlin, Germany, Springer-Verlag, pp. 751-754.

30-“Minority carrier generation in very thin silicon on insulator films” IEEE SOS/SOI Technology Workshop, State line, Nevada (USA), pp. 54—55.

31-“Detailed charge pumping evaluation of SIMOX using gated P-I-N diodes” IEEE SOS/SOI Technology Conference, Stateline, Nevada, USA, pp. 148—149.

32-“Novel investigation of edge effects in SIMOX transistors” IEEE SOS/SOI Technology Conference, Stateline, Nevada, USA, pp. 35—36.

33-“Propriétés électriques des couches minces. SIMOX et do. diapositifs intégrés MOS/SIMOX” Opération GCIS COUCHES MINCES .

34-static and dynamic transconductance model for depletion-mode transistors A new characterization method for Silicon on insulator materials” IEEE Electron Device Lett., vol. EDL-9, pp. 35-37.

35-“Interface properties and recombination mechanisms in SIMOX structures” published in Physics and Technology of Amorphous Si02, Plenum Press (R.A.B. Devine Ed.), New York, pp. 553—556.

36-“Carrier generation and trapping properties in SIMOX structures” ESSDERC 87, Bologne, Italy, published in Solid—State Devices, G. Soncini and P.U. Calzolari (eds), Elsevier Science Publishers B.V. (North—Holland), pp. 599 -602.

37-“Volume inversion in 501 MOSFET’s with double gate control: A new transistor operation with greatly enhanced performance” ESSDERC 87, Bologne, Italy, published in Solid—State Devices, G. Soncini and P.U. Calzolari (eds), Elsevier Science Publishers B.V. (North—Holland), pp. 575—578.

38-“Optimum parameters for high performance volume—inversion MOSFET’s in ohmic and saturation regions” European SOT Workshop, Meylan, France, p. F5.

39-“Interface characterisation of SIMOX material using charge pumping” European S01 Workshop, Meylan, France, P. F15.

40-“Gate controlled magnetodiodes in SIMOX and SOS structures” European SOI Workshop, Meylan, France, p. G6.

41-“Performance of SIMOX transistors at very low temperatures” IEEE SOS/SOI Technology Workshop, St. Simons Island, Georgia, USA, p.77.

42-“Charge pumping in silicon on insulator structures using gated P-I-N diodes” ESSDERC 88, Montpellier, France, published in Journal de Physique, Colloque 04, suplément au nº9, Tome 49, pp. 137—140

43-“Propriétés électriques des couches minces SIMOX et des dispositifs intégrée MOS /SIMOX” Opération GCIS COUCHES MINCES 1987-1988.

44-“Double-gate Silicon on insulator transistor with volume inversion A new device with greatly enhanced performance” IEEE Electron Device Lett., vol. EDL-8, pp. 410—413.

45-“Low frequency noise of front channel and back channel MOSFET’s fabricated on silicon on insulator SIMOX substrates” published in Noise in Physical system., World Scientific, C.M. VANVLIEt ed., Traneck, NJ, pp. 457—460.

46-“Recombination, trapping and noise in SIMOX structures” IEEE SOS/SOI Technology Workshop, Durango, Colorado, p. 18

47-“Double—gate SOI MOSFET with volume inversion: A new device with greatly enhanced performance” IEEE SOS/SOI Technology Workshop, Durango, Colorado, p. 78.

48- “Propriétés électriques des couches minces SIMOX et des dispositifs intégrés MOS/SIMOX” Operation GCIS COUCHES MINCES .

49-“Low frequency noise in depletion mode SIMOX transistors” ESSDERC 90, Nottingham, England.

Dr. Mohamed Tarek Hasan Mohamed Elewa :: Publications: