| Title: | “Volume inversion in 501 MOSFET’s with double gate control: A new transistor operation with greatly enhanced performance” ESSDERC 87, Bologne, Italy, published in Solid—State Devices, G. Soncini and P.U. Calzolari (eds), Elsevier Science Publishers B.V. (North—Holland), pp. 575—578.
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| Authors: | F. BALESTRA, S. CRISTOLOVEANU, M. BENACHIR., J. BRINI, T ELEWA |
| Year: | 1988 |
| Keywords: | Not Available |
| Journal: | Not Available |
| Volume: | Not Available |
| Issue: | Not Available |
| Pages: | Not Available |
| Publisher: | Not Available |
| Local/International: | International |
| Paper Link: | Not Available |
| Full paper | Not Available |
| Supplementary materials | Not Available |
| Abstract: |
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