| You are in:Home/Publications/Diffusion in Semiconductors by Using Fourier Series Expansion Technique | |
Prof. Prof. Dr. Saeed El-Sayed Abdel Ghany El-Sayed :: Publications: |
|
| Title: | Diffusion in Semiconductors by Using Fourier
Series Expansion Technique |
| Authors: | M. K. El-Adawi, S.E. S. Abd e l-Ghany** and S.A. Shalaby |
| Year: | 2014 |
| Keywords: | Not Available |
| Journal: | Not Available |
| Volume: | Not Available |
| Issue: | Not Available |
| Pages: | Not Available |
| Publisher: | Not Available |
| Local/International: | International |
| Paper Link: | Not Available |
| Full paper | Not Available |
| Supplementary materials | Not Available |
| Abstract: |
Doping by diffusion is still one of acceptable and important methods that have essential technological applications. A theoretical approach to study diffusion in semi-conductors is introduced. The diffusion equation together with Fick’s law and mass balance equation are solved to obtain the concentration function and the mass penetration depth using Fourier Series expansion technique. Doping of indium, phosphorus, gallium and Arsenic in Silicon as illustrative examples are given. |
