AlZnMgCu, the high-strength aluminum alloy, is unsuitable for laser melting applications due to its high hot cracking sensitivity and large solidification temperature range. Adapting this alloy for laser melting processing is a high-demand research issue for extending its use. Thus, this paper investigates the effect of adding 4%Si, 4%Si-Sc + Zr, 4%Si-Ti + B, and homogenization annealing on the laser melting process (LMP) of AlZnMgCu alloy. Homogenization annealing at 500 ◦C for 6.5 h was selected to dissolve most of the low melting temperature phases into the grain matrix and perform stable alloys for the LMP. The pulsed laser melting process (PLM) was performed on the as-casted and the homogenized samples. The microstructures of the as-casted, the homogenized alloys, and after the LMP were evaluated. In addition, the hardness of the base metal (BM) and laser melted zone (LMZ) were measured. The results revealed that the microstructure was enhanced and refined in the as-cast state by adding the modifiers due to the increasing nucleation potency of solidification sites and the formation of primary Al3 (Ti, Zr, Sc) phases. The average grain size was decreased by 15.6 times when adding 4%Si + 0.4%Zr + 0.29%Sc, while it decreased by 10.2 times when adding 4%Si + 1%Ti + 0.2%B. The LMZ of the as-casted samples exhibited a non-uniform distribution of the grains and the elements after the LMP. This was attributed to the evaporation of Zn, Mg during the high laser power process besides the non-uniform distribution of elements and phases in samples during casting. After the laser treating of the homogenized samples with 4%Si-Sc + Zr, uniform columnar grains were formed in the direction of the laser. The presence of Ti and B changed the crystallization nature, resulting in the LMZ with very fine and equiaxed grains due to forming many nucleation centers during solidification. The hardness values have positively increased due to Si addition and adding a combination of Ti + B and Sc + Zr. The maximum hardness was 153.9 ± 5 HV achieved in the LMZ of the homogenized samples of 4%Si + 1%Ti + 0.2%B |
